High Efficiency Deep Ultraviolet Light-Emitting Diodes With Polarity Inversion of Hole Injection Layer
نویسندگان
چکیده
In this work, we investigate the performance improvement of N-polar AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) by inversion hole injection layer from to Ga-polar. The influence different points on and energy band DUV LED is systematically studied, principle explained in detail through analysis band. Furthermore, according simulation results practical application, an appropriate point selected. Under current 120 mA, with polarity layer, light output power LEDs increases 21.34 mW 29.71 mW, applied voltage reduces 16.06 V 9.63 V. has a 132% increase wall-plug efficiency (WPE) compared which totally along [000-1] direction. Therefore, effective way achieve high-performance UV-LEDs.
منابع مشابه
High-Efficiency, Solution-Processed, Multilayer Phosphorescent Organic Light-Emitting Diodes with a Copper Thiocyanate Hole-Injection/Hole-Transport Layer
Copper thiocyanate (CuSCN) is introduced as a hole-injection/hole-transport layer (HIL/HTL) for solution-processed organic light-emitting diodes (OLEDs). The OLED devices reported here with CuSCN as HIL/HTL perform significantly better than equivalent devices fabricated with a PEDOT:PSS HIL/HTL, and solution-processed, phosphorescent, small-molecule, green OLEDs with maximum luminance ≥10 000 c...
متن کاملOn the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes
The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum we...
متن کاملRecent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
متن کامل
Nitride deep-ultraviolet light-emitting diodes with microlens array
We report on the fabrication of 280-nm AlGaN-based deep-ultraviolet light-emitting diodes sUV LEDsd on sapphire substrates with an integrated microlens array. Microlenses with a diameter of 12 mm were fabricated on the sapphire substrate by resist thermal reflow and plasma dry etching. LED devices were flip-chip bonded on high thermal conductive AlN ceramic submounts to improve the thermal diss...
متن کاملEnhanced Performance of Quantum Dot-Based Light-Emitting Diodes with Gold Nanoparticle-Doped Hole Injection Layer
UNLABELLED In this paper, the performance of quantum dot-based light-emitting diodes (QLEDs) comprising ZnCdSe/ZnS core-shell QDs as an emitting layer were enhanced by employing Au-doped poly(3,4-ethylenedioxythiophene)/polystyrene sulfonate ( PEDOT PSS) hole injection layer (HIL). By varying the concentration and dimension of Au nanoparticle (NP) dopants in PEDOT PSS, the optimal devices w...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Photonics Journal
سال: 2023
ISSN: ['1943-0655', '1943-0647']
DOI: https://doi.org/10.1109/jphot.2023.3247451